NVD5865NLT4G The On Semiconductor NVD5865NLT4G is a single N-Channel MOSFET with a 60V drain-to-source voltage. It offers high current capability with 46A continuous drain current at 25°C case temperature.
Mfr Part #:

NVD5865NLT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NVD5865NLT4G is a single N-Channel MOSFET with a 60V drain-to-source voltage. It offers high current capability with 46A continuous drain current at 25°C case temperature.
✓ Total Stock: 122 pcs
$ Price Range: $0.99

NVD5865NLT4G Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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122 pcs
122 pcs On Request 1 On Request On Request 14+ On Request On Request

NVD5865NLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5865NLT4G Description

Short technical summary and product information.

The NVD5865NLT4G is a single N-Channel Power MOSFET manufactured by On Semiconductor. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 46A at 25°C case temperature, and 10A at 25°C ambient temperature. The MOSFET has a low on-resistance of 16mOhm at 19A and 10V Vgs, minimizing conduction losses.

 

Designed for efficiency, this MOSFET boasts features like low RDS(on), high current capability, and specified avalanche energy. It operates within a wide temperature range of -55°C to 175°C. The device is AEC-Q101 qualified, indicating its suitability for automotive applications.

 

The NVD5865NLT4G is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, meeting environmental standards for modern electronic designs.

NVD5865NLT4G Quick Information

Product Type: MOSFET
Canonical Name: NVD5865NLT4G Single N-Channel MOSFET
Subcategory: Single

NVD5865NLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5865NLT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5865NLT4G Features

  • 60V drain-to-source voltage rating.
  • 46A continuous drain current capability.
  • Low 16mOhm Rds(on) at 10V.
  • AEC-Q101 qualified for reliability.
  • Surface mount TO-252 DPAK package.

NVD5865NLT4G Applications

  • Suitable for high-current switching.
  • Ideal for power management circuits.
  • Used in automotive applications.
  • Efficient conduction loss minimization.

NVD5865NLT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVD5865NLT4G MOSFET?

The drain-to-source voltage (Vdss) of the NVD5865NLT4G is 60V.

What is the continuous drain current for the NVD5865NLT4G?

The continuous drain current is 46A at 25°C case temperature and 10A at 25°C ambient temperature.

What is the on-resistance (Rds(on)) of the NVD5865NLT4G?

The on-resistance is a maximum of 16mOhm at 19A drain current and 10V gate-to-source voltage.

What is the operating temperature range for the NVD5865NLT4G?

The operating junction and storage temperature range is -55°C to 175°C.

Is the NVD5865NLT4G RoHS compliant?

Yes, the NVD5865NLT4G is RoHS3 Compliant.

What package type is the NVD5865NLT4G MOSFET supplied in?

The NVD5865NLT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is a surface mount type.

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