NVD5863NLT4G-VF01 The ON Semiconductor NVD5863NLT4G-VF01 is an N-Channel MOSFET with a 60V drain-to-source voltage. It features a low on-resistance of 7.1mOhm at 41A and 10V.
Mfr Part #:

NVD5863NLT4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD5863NLT4G-VF01 is an N-Channel MOSFET with a 60V drain-to-source voltage. It features a low on-resistance of 7.1mOhm at 41A and 10V.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NVD5863NLT4G-VF01 Available from 1 distributor

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✓ Non-Authorised
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NVD5863NLT4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5863NLT4G-VF01 Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVD5863NLT4G-VF01, is designed for power switching applications. It offers a maximum drain-to-source voltage (Vdss) of 60V and can handle continuous currents of 14.9A at ambient temperature and up to 82A at case temperature.

 

The MOSFET exhibits a low on-resistance (Rds On) of 7.1mOhm when measured at 41A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 70 nC at 10V and an input capacitance (Ciss) of 3850 pF at 25V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.

 

Designed for surface mounting, this component comes in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, also referred to as DPAK-3. It operates within a wide temperature range of -55°C to 175°C (TJ). The maximum power dissipation is rated at 3.1W at ambient temperature and 96W at case temperature.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. This MOSFET is suitable for various power management and switching circuits where high current and low on-resistance are critical.

NVD5863NLT4G-VF01 Quick Information

Product Type: MOSFET
Series: NVD5863NLT4G-VF01
Canonical Name: NVD5863NLT4G-VF01 N-Channel MOSFET
Subcategory: Single

NVD5863NLT4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5863NLT4G-VF01 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5863NLT4G-VF01 Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • High continuous current rating of 82A (Tc).
  • Low on-resistance of 7.1mOhm at 41A, 10V.
  • Surface mount DPAK-3 package for easy integration.
  • Wide operating temperature range of -55°C to 175°C.

NVD5863NLT4G-VF01 Applications

  • Power switching and management circuits.
  • High-efficiency power supply designs.
  • Motor control applications.
  • Automotive power electronics.

NVD5863NLT4G-VF01 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVD5863NLT4G-VF01?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous current rating of the NVD5863NLT4G-VF01?

The continuous current rating is 14.9A at ambient temperature and 82A at case temperature.

What is the on-resistance of the NVD5863NLT4G-VF01?

The Rds On is a maximum of 7.1mOhm at 41A and 10V.

What is the package type for the NVD5863NLT4G-VF01?

It is a Surface Mount device in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

What is the operating temperature range of this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

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