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NVD5862NT4G The ON Semiconductor NVD5862NT4G is a single N-Channel Power MOSFET designed for high current applications. It features low Rds(on) and high current capability.
Mfr Part #:

NVD5862NT4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD5862NT4G is a single N-Channel Power MOSFET designed for high current applications. It features low Rds(on) and high current capability.
✓ Total Stock: 11,433 pcs
$ Price Range: $0.29

NVD5862NT4G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
7,933 pcs
On Request
7933 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request 17+ On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NVD5862NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVD5862NT4G Description

Short technical summary and product information.

The ON Semiconductor NVD5862NT4G is a high-performance N-Channel Power MOSFET. It offers a low Rds(on) of 5.7mOhm at 48A and 10V Vgs, minimizing conduction losses. This device boasts a high continuous drain current capability of 98A at 25°C case temperature and 18A at 25°C ambient temperature.

 

With a Drain-to-Source Voltage (Vdss) of 60V and a Gate-to-Source Voltage (Vgs) range of ±20V, it is suitable for various power switching applications. The MOSFET operates within a junction temperature range of -55°C to 175°C. It is AEC-Q101 Qualified and PPAP Capable.

 

The NVD5862NT4G is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

NVD5862NT4G Quick Information

Product Type: MOSFET
Series: NVD5862NT4G
Canonical Name: NVD5862NT4G Single N-Channel Power MOSFET
Subcategory: Single FETs

NVD5862NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5862NT4G Estimated Pricing

Qty Low High
1+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5862NT4G Features

  • 60V Drain-to-Source Voltage (Vdss).
  • High 98A continuous drain current.
  • Low 5.7mOhm Rds(on) at 10V.
  • AEC-Q101 Qualified and PPAP Capable.
  • Pb-Free, Halogen Free, RoHS Compliant.

NVD5862NT4G Applications

  • Suitable for high-current power switching applications.
  • Ideal for motor control and power supplies.
  • Used in DC-DC converter circuits.
  • Applicable in automotive and industrial power systems.
  • Suitable for load switching in various electronic devices.

NVD5862NT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-to-Source Voltage (Vdss) for the NVD5862NT4G?

The maximum Drain-to-Source Voltage (Vdss) for the NVD5862NT4G is 60V.

What is the Rds(on) of the NVD5862NT4G MOSFET?

The On-Resistance (Rds(on)) is a maximum of 5.7mOhm at a drain current (Id) of 48A and gate-source voltage (Vgs) of 10V.

What is the continuous drain current capability of the NVD5862NT4G?

The continuous drain current is 98A when measured at the case temperature (Tc) of 25°C, and 18A when measured at the ambient temperature (Ta) of 25°C.

What is the operating temperature range for the NVD5862NT4G?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVD5862NT4G MOSFET supplied in?

The NVD5862NT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is suitable for surface mounting.

Is the NVD5862NT4G RoHS compliant?

Yes, the NVD5862NT4G is RoHS3 Compliant.

Is the NVD5862NT4G AEC-Q101 Qualified?

Yes, the NVD5862NT4G is AEC-Q101 Qualified and PPAP Capable.

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