| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVD5805NT4G is a single N-Channel Power MOSFET designed for various applications including LED backlighting, DC motor control, and synchronous rectification in power supplies. It features a low on-resistance with a maximum of 9.5 mOhm at 15A and 10V Vgs, and a high current capability of 51A at 25°C case temperature.
This MOSFET operates with a drain-to-source voltage (Vds) of 40V and a continuous gate-to-source voltage (Vgs) of ±20V. The device has a maximum power dissipation of 47W at 25°C case temperature and an operating junction and storage temperature range of -55°C to 175°C.
The NVD5805NT4G is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, making it suitable for space-constrained designs. It is Pb-Free and RoHS Compliant, indicating adherence to environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 40 V.
The maximum continuous drain current is 51 A.
It comes in a TO-252-3, DPAK package.
The maximum power dissipation is 47 W at 25°C.
-55°C to 175°C.
Yes, it is RoHS3 compliant.
Yes, it is lead-free.