NVD5802NT4G The ON Semiconductor NVD5802NT4G is an N-Channel MOSFET designed for power delivery applications. It features a 40V drain-source voltage and a high continuous drain current capability.
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NVD5802NT4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD5802NT4G is an N-Channel MOSFET designed for power delivery applications. It features a 40V drain-source voltage and a high continuous drain current capability.
✓ Total Stock: 2,813 pcs
$ Price Range: $0.99

NVD5802NT4G Available from 1 distributor

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NVD5802NT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD5802NT4G Description

Short technical summary and product information.

The ON Semiconductor NVD5802NT4G is a single N-Channel MOSFET in a DPAK surface mount package. It offers a drain-source voltage of 40V and a maximum continuous drain current of 101A when measured at the case temperature (Tc) of 25°C, and 16.4A when measured at an ambient temperature (Ta) of 25°C.

 

This MOSFET has a low on-resistance of 4.4mOhm at 50A and 10V, minimizing conduction losses. It is designed with optimized gate charge to minimize switching losses and features low capacitance to reduce driver losses. The operating temperature range is -55°C to 175°C (TJ).

 

Applications for this device include CPU power delivery, DC-DC converters, and motor drivers. The DPAK package is suitable for surface mounting.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) range of ±20V and a gate threshold voltage (Vgs(th)) of 3.5V maximum at 250µA. Input capacitance (Ciss) is 5300pF maximum at 12V, and gate charge (Qg) is 100nC maximum at 10V.

NVD5802NT4G Quick Information

Product Type: MOSFET
Series: NVD5802NT4G
Canonical Name: NVD5802NT4G N-Channel MOSFET
Subcategory: N-Channel

NVD5802NT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVD5802NT4G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5802NT4G Features

  • 40V drain-to-source voltage rating.
  • 101A continuous drain current (Tc).
  • 4.4mOhm maximum on-resistance.
  • Surface mount DPAK package.
  • Optimized gate charge for switching.

NVD5802NT4G Applications

  • Suitable for CPU power delivery.
  • Used in DC-DC converters.
  • Ideal for motor driver circuits.
  • Designed for power management.

NVD5802NT4G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NVD5802NT4G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 101A when measured at the case temperature (Tc) of 25°C, and 16.4A when measured at an ambient temperature (Ta) of 25°C.

What is the on-resistance of the NVD5802NT4G?

The maximum on-resistance (Rds On) is 4.4mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVD5802NT4G in?

The NVD5802NT4G is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.

Is the NVD5802NT4G RoHS compliant?

Yes, the NVD5802NT4G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1.

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