| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,043 pcs
|
4043 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
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The ON Semiconductor NVD5413NT4G is a single N-Channel Power MOSFET designed for various applications including LED lighting, DC-DC converters, and switch mode power supplies. It offers a drain-to-source voltage of 60V and a continuous drain current capability of 30A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 26mOhm at 20A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The device operates within a temperature range of -55°C to +175°C.
This MOSFET is housed in a TO-252-3, DPak surface mount package, making it suitable for space-constrained designs. It is specified with a maximum power dissipation of 68W at 25°C case temperature and features low Rds(on) and high current capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVD5413NT4G is 60V.
The NVD5413NT4G has a maximum continuous drain current of 30A at 25°C.
The Rds(on) is a maximum of 26mOhm at 20A and 10V.
The NVD5413NT4G is supplied in a TO-252-3, DPak package.
The operating and storage temperature range for the NVD5413NT4G is -55°C to +175°C.
The NVD5413NT4G is RoHS3 Compliant.