| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,020 pcs
|
51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,761 pcs
|
1761 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This ON Semiconductor NVD5117PLT4G-VF01 is a P-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 60V and a maximum continuous drain current of 11A when measured at the case temperature (Ta) or 61A at the component temperature (Tc).
The MOSFET has a low on-resistance (Rds On) of 16mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 29A. The gate threshold voltage (Vgs(th)) is 2.5V at 250µA. It operates within a temperature range of -55°C to 175°C (TJ).
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63, this component is designed for surface mounting. The technology used is MOSFET (Metal Oxide), providing efficient switching capabilities for various electronic designs.
Key electrical characteristics include input capacitance (Ciss) of 4800 pF at 25V and gate charge (Qg) of 85 nC at 10V. The maximum gate-to-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the NVD5117PLT4G-VF01 is 60V.
The maximum continuous drain current is 11A (Ta) or 61A (Tc).
The on-resistance (Rds On) is a maximum of 16mOhm at 29A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The NVD5117PLT4G-VF01 is designed for surface mounting.