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NVD5117PLT4G The NVD5117PLT4G is a P-Channel MOSFET from On Semiconductor, designed for power applications. It features a -60V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVD5117PLT4G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVD5117PLT4G is a P-Channel MOSFET from On Semiconductor, designed for power applications. It features a -60V drain-to-source voltage and low on-resistance.
✓ Total Stock: 15,451 pcs
$ Price Range: $0.99

NVD5117PLT4G Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
4,364 pcs
On Request
4364 pcs On Request 1 On Request On Request 16+17+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,012 pcs
On Request
1012 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
75 pcs
On Request
75 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NVD5117PLT4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NVD5117PLT4G Description

Short technical summary and product information.

The NVD5117PLT4G is a P-Channel MOSFET manufactured by On Semiconductor. This device is designed to minimize conduction losses with its low RDS(on) of 16mOhm at 29A and 10V Vgs. It offers a high current capability of up to 61A (Tc) and a drain-to-source voltage of -60V.

 

This MOSFET is AEC-Q101 qualified, indicating its suitability for automotive applications. It operates over a wide temperature range from -55°C to 175°C. The device is available in a surface-mount DPAK (TO-252-3) package, making it suitable for various board designs.

 

Key electrical characteristics include a gate charge of 85nC and input capacitance of 4800pF. The device also specifies a single pulse avalanche energy of 240mJ. It is Pb-Free and Halogen Free, complying with RoHS standards.

NVD5117PLT4G Quick Information

Product Type: MOSFET
Series: NVD5117PLT4G
Canonical Name: NVD5117PLT4G P-Channel MOSFET
Subcategory: P-Channel

NVD5117PLT4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD5117PLT4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD5117PLT4G Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • Low Rds(on) of 16mOhm at 29A, 10V.
  • High current capability up to 61A (Tc).
  • AEC-Q101 Qualified for automotive use.
  • Surface mount DPAK package.

NVD5117PLT4G Applications

  • Suitable for power switching applications.
  • Used in automotive systems.
  • Ideal for high current designs.
  • Efficient power management solutions.

NVD5117PLT4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NVD5117PLT4G?

The drain-to-source voltage (Vdss) is -60 V.

What is the maximum continuous drain current for the NVD5117PLT4G?

The maximum continuous drain current is 61 A when measured at the case temperature of 25°C, and 11 A when measured at an ambient temperature of 25°C.

What is the Rds(on) of the NVD5117PLT4G MOSFET?

The Rds(on) is a maximum of 16mOhm at a drain current of 29A and gate-source voltage of 10V.

What is the operating temperature range for the NVD5117PLT4G?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVD5117PLT4G MOSFET supplied in?

The NVD5117PLT4G is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, which is a surface mount type.

Is the NVD5117PLT4G AEC-Q101 qualified?

Yes, the NVD5117PLT4G is AEC-Q101 Qualified.

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