NVD3055L170T4G-VF01 The ON Semiconductor NVD3055L170T4G-VF01 is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a 9A continuous drain current.
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NVD3055L170T4G-VF01

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD3055L170T4G-VF01 is an N-Channel MOSFET designed for high-speed switching applications. It features a 60V drain-to-source voltage and a 9A continuous drain current.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVD3055L170T4G-VF01 Available from 1 distributor

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NVD3055L170T4G-VF01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD3055L170T4G-VF01 Description

Short technical summary and product information.

The ON Semiconductor NVD3055L170T4G-VF01 is a power MOSFET designed for low voltage, high-speed switching applications. It is an N-Channel, Logic Level MOSFET with a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 9A at 25°C.

 

Key electrical characteristics include a maximum Rds(on) of 170mOhm at 4.5A and 5V, an input capacitance (Ciss) of 275pF at 25V, and a gate charge (Qg) of 10nC at 5V. The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA.

 

This MOSFET is rated for a wide operating temperature range of -55°C to 175°C. It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package and supports surface mount installation.

 

Typical applications include power supplies, converters, power motor controls, and bridge circuits. The NVD prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

NVD3055L170T4G-VF01 Quick Information

Product Type: MOSFET
Canonical Name: NVD3055L170T4G-VF01 N-Channel Logic Level MOSFET
Subcategory: N-Channel

NVD3055L170T4G-VF01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVD3055L170T4G-VF01 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD3055L170T4G-VF01 Features

  • 60V drain-to-source voltage rating.
  • 9A continuous drain current capability.
  • 170mOhm maximum Rds(on) at 5V.
  • Logic Level MOSFET for low voltage drive.
  • AEC-Q101 qualified for automotive use.

NVD3055L170T4G-VF01 Applications

  • Designed for power supplies.
  • Used in DC-DC converters.
  • Suitable for power motor controls.
  • Applicable for bridge circuits.
  • Automotive and high-speed switching.

NVD3055L170T4G-VF01 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVD3055L170T4G-VF01?

The maximum drain-to-source voltage (Vdss) is 60 Vdc.

What is the continuous drain current rating?

The continuous drain current is 9.0 Adc at 25°C.

What is the Rds(on) for this MOSFET?

The Rds(on) is a maximum of 170mOhm at 4.5A and 5V.

What is the operating temperature range?

The operating and storage temperature range is -55°C to 175°C.

What package type is the NVD3055L170T4G-VF01 in?

It is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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