NVD2955T4G The ON Semiconductor NVD2955T4G is a P-Channel MOSFET designed for high-speed switching applications. It features a -60V drain-source voltage and 12A continuous current.
Mfr Part #:

NVD2955T4G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD2955T4G is a P-Channel MOSFET designed for high-speed switching applications. It features a -60V drain-source voltage and 12A continuous current.
✓ Total Stock: 23,596 pcs
$ Price Range: $0.99

NVD2955T4G Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,500 pcs
22500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
96 pcs
96 pcs On Request 1 On Request On Request On Request On Request On Request

NVD2955T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

NVD2955T4G Description

Short technical summary and product information.

The ON Semiconductor NVD2955T4G is a P-Channel Power MOSFET designed for low-voltage, high-speed switching applications. This device is suitable for use in power supplies, converters, and power motor controls.

 

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of 12A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 180mOhm at 6A and 10V gate-source voltage. The gate-to-source voltage (Vgs) has a continuous rating of ±20V.

 

This MOSFET has a maximum power dissipation of 55W at 25°C ambient temperature. It operates within a temperature range of -55°C to 175°C. The device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting.

 

The NVD2955T4G is Pb-Free and RoHS Compliant. It is qualified to AEC-Q101 standards and PPAP capable, making it suitable for automotive applications.

NVD2955T4G Quick Information

Product Type: MOSFET
Canonical Name: NVD2955T4G P-Channel Power MOSFET
Subcategory: Power MOSFET

NVD2955T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NVD2955T4G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD2955T4G Features

  • P-Channel MOSFET for power applications.
  • -60V drain-source voltage rating.
  • 12A continuous drain current.
  • 180mOhm maximum on-resistance.
  • Surface mount DPAK package.

NVD2955T4G Applications

  • Suitable for power supplies.
  • Used in converters.
  • Power motor controls.
  • Bridge circuits.

NVD2955T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVD2955T4G?

-60V

What is the continuous drain current of the NVD2955T4G?

12A

What is the maximum on-resistance for the NVD2955T4G?

180mOhm

What is the operating temperature range for this MOSFET?

-55°C to 175°C

What package type is the NVD2955T4G MOSFET?

TO-252-3, DPak (2 Leads + Tab), SC-63

Is the NVD2955T4G RoHS compliant?

Yes, it is RoHS3 Compliant.

Home
Account

Categories