NVD260N65S3T4G The ON Semiconductor NVD260N65S3T4G is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 260mOhm maximum on-resistance.
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NVD260N65S3T4G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVD260N65S3T4G is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a 260mOhm maximum on-resistance.
✓ Total Stock: 33,725 pcs
$ Price Range: $0.65

NVD260N65S3T4G Available from 1 distributor

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NVD260N65S3T4G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVD260N65S3T4G Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NVD260N65S3T4G, is part of the SUPERFET III Easy Drive family. It is rated for a maximum drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 12A at 25°C.

 

The MOSFET offers a low on-resistance of 260mOhm at a gate-source voltage (Vgs) of 10V, with a gate threshold voltage (Vgs(th)) of 4.5V at 290µA. Key electrical characteristics include an input capacitance (Ciss) of 1042pF at 400V and a gate charge (Qg) of 23.5nC at 10V.

 

Designed for surface mounting, this component comes in a DPAK (TO-252-3) package. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 90W at 25°C. The device is AEC-Q101 qualified and RoHS compliant.

 

With its robust specifications, including 100% avalanche testing and low FOM, the NVD260N65S3T4G is suitable for various power switching applications requiring high efficiency and reliability.

NVD260N65S3T4G Quick Information

Product Type: MOSFET
Series: Easy Drive
Canonical Name: N-Channel MOSFET, 650V, 12A, 260mOhm
Subcategory: Single

NVD260N65S3T4G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVD260N65S3T4G Estimated Pricing

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1+ $0.65 $0.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVD260N65S3T4G Features

  • 650V drain-to-source voltage rating.
  • 12A continuous drain current capability.
  • 260mOhm maximum on-resistance.
  • Surface mount DPAK package.
  • AEC-Q101 qualified and RoHS compliant.

NVD260N65S3T4G Applications

  • Suitable for power supply applications.
  • Used in motor control circuits.
  • Ideal for lighting control systems.
  • Applicable in industrial power systems.

NVD260N65S3T4G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVD260N65S3T4G?

The maximum drain-to-source voltage (VDSS) is 650 V.

What is the continuous drain current of the NVD260N65S3T4G?

The continuous drain current is 12 A at 25°C.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance (Rds On) is 260mOhm at 6A and 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NVD260N65S3T4G supplied in?

It is supplied in a DPAK package.

Is the NVD260N65S3T4G RoHS compliant?

Yes, the device is RoHS3 Compliant.

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