| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVC3S5A51PLZT1G is a P-Channel MOSFET suitable for various electronic applications. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.8A at 25°C.
This MOSFET has a maximum Rds On of 250mOhm at 1A and 10V, with drive voltages ranging from 4V to 10V. The gate charge (Qg) is a maximum of 6 nC at 10V, and input capacitance (Ciss) is 262 pF at 20V. The threshold voltage (Vgs(th)) is a maximum of 2.6V at 1mA, and the maximum gate-source voltage (Vgs) is ±20V.
Operating within a temperature range of -55°C to 175°C (TJ), the NVC3S5A51PLZT1G has a maximum power dissipation of 1.2W (Ta). It is packaged in a TO-236-3, SC-59, SOT-23-3 (3-CPH) surface mount package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 1.8A at 25°C.
The maximum Rds On is 250mOhm at 1A and 10V.
The operating temperature range is -55°C to 175°C.
It is in a TO-236-3, SC-59, SOT-23-3 package.
It is a surface mount device.