| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,400 pcs
|
10400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVBG160N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET. It is rated for a maximum drain-to-source voltage (Vdss) of 1200V and a continuous drain current of 19.5A at 25°C case temperature. The device exhibits a typical on-resistance (Rds(on)) of 160 mOhm and a maximum of 224 mOhm at 12A and 20V gate-source voltage.
This MOSFET is designed for demanding applications, offering features such as low gate charge (Qg) of 33.8 nC and low effective output capacitance (Coss) of 50.7 pF. It operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 136W at 25°C case temperature.
The NVBG160N120SC1 is housed in a surface-mount D2PAK-7L package, suitable for automated assembly processes. Its AEC-Q101 qualification indicates its suitability for automotive applications, including on-board chargers and DC-DC converters for electric and hybrid vehicles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200 V.
The typical on-resistance is 160 mOhm.
The continuous drain current is 19.5 A at 25°C case temperature.
The operating junction temperature range is -55°C to +175°C.
This MOSFET is in a Surface Mount D2PAK-7L package.
Yes, this device is AEC-Q101 qualified.