| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,600 pcs
|
5600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVBG095N065SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It features a drain-to-source voltage rating of 650V and a low typical on-resistance of 70 mOhm at 18V gate-source voltage.
This MOSFET boasts an ultra-low gate charge of 50 nC and low output capacitance, contributing to efficient switching performance. It is rated for continuous drain current up to 30A at 25°C case temperature and has a maximum power dissipation of 110W.
The device operates within a junction temperature range of -55°C to 175°C. It is supplied in a surface-mount D2PAK-7L package, suitable for automated assembly processes.
Key electrical characteristics include a breakdown voltage of 650V and a gate threshold voltage of 4.3V at 4mA. The technology utilized is Silicon Carbide (SiC), offering advantages over traditional silicon MOSFETs in terms of higher efficiency and power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The typical on-resistance (RDS(on)) at 18V gate-source voltage is 70 mOhm.
The maximum gate charge (Qg) is 50 nC at 18V gate-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a D2PAK-7L package.
The RoHS status is RoHS3 Compliant.