NVBG080N120SC1 The ON Semiconductor NVBG080N120SC1 is a 1200V N-Channel Silicon Carbide MOSFET. It features a low Rds(on) of 110mOhm at 20A and 20V, and a continuous drain current of 30A.
Mfr Part #:

NVBG080N120SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVBG080N120SC1 is a 1200V N-Channel Silicon Carbide MOSFET. It features a low Rds(on) of 110mOhm at 20A and 20V, and a continuous drain current of 30A.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVBG080N120SC1 Available from 1 distributor

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NVBG080N120SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVBG080N120SC1 Description

Short technical summary and product information.

The ON Semiconductor NVBG080N120SC1 is an N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. It offers a high drain-to-source voltage rating of 1200V and a continuous drain current of 30A at 25°C case temperature.

 

Key electrical characteristics include a typical Rds(on) of 110mOhm at 20A and 20V, and a gate charge (Qg) of 56nC at 20V. The device operates within a wide temperature range of -55°C to +175°C.

 

This MOSFET is housed in a surface-mount D2PAK-7L package, suitable for demanding thermal management. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

Typical applications include automotive on-board chargers and DC-DC converters for electric and hybrid electric vehicles.

NVBG080N120SC1 Quick Information

Product Type: MOSFET
Series: NVBG080N120SC1
Canonical Name: On Semiconductor NVBG080N120SC1 N-Channel SiC MOSFET
Subcategory: N-Channel

NVBG080N120SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NVBG080N120SC1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVBG080N120SC1 Features

  • 1200V drain-to-source voltage rating.
  • 30A continuous drain current capability.
  • Low 110mOhm Rds(on) at 20A.
  • Wide -55°C to +175°C operating temperature.
  • AEC-Q101 qualified for automotive use.

NVBG080N120SC1 Applications

  • Suitable for high-voltage power switching applications.
  • Ideal for automotive DC-DC converters.
  • Used in electric vehicle onboard chargers.
  • Applicable in industrial motor drive circuits.
  • Suitable for solar inverter power stages.

NVBG080N120SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVBG080N120SC1?

The maximum drain-to-source voltage (VDSS) is 1200V.

What is the typical on-resistance of the NVBG080N120SC1?

The typical on-resistance (Rds(on)) is 110mOhm when measured at 20A drain current and 20V gate-source voltage.

What is the continuous drain current rating?

The continuous drain current (ID) is 30A at a case temperature of 25°C.

What is the operating temperature range?

The operating junction and storage temperature range is from -55°C to +175°C.

What package type is the NVBG080N120SC1 supplied in?

This MOSFET is supplied in a D2PAK-7L package for surface mounting.

Is this device RoHS compliant?

Yes, this device is RoHS3 Compliant.

Is the NVBG080N120SC1 Halide Free?

Yes, this device is Halide Free.

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