NVBG045N065SC1 The NVBG045N065SC1 is an N-Channel Silicon Carbide MOSFET from ON Semiconductor. It features a 650V drain-source voltage and a typical RDS(on) of 31 mOhm.
Mfr Part #:

NVBG045N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVBG045N065SC1 is an N-Channel Silicon Carbide MOSFET from ON Semiconductor. It features a 650V drain-source voltage and a typical RDS(on) of 31 mOhm.
✓ Total Stock: 52,800 pcs
$ Price Range: $0.99

NVBG045N065SC1 Available from 1 distributor

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NVBG045N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVBG045N065SC1 Description

Short technical summary and product information.

The NVBG045N065SC1 is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by ON Semiconductor. This device is designed for high-performance applications, offering a drain-to-source voltage (VDSS) of 650V.

 

Key electrical characteristics include a typical on-resistance (RDS(on)) of 31 mOhm at VGS = 18V and 45 mOhm at VGS = 15V. It has a continuous drain current (ID) of 62A at 25°C and a maximum power dissipation (PD) of 242W at 25°C. The device also features low gate charge (QG(tot) = 105 nC) and low effective output capacitance (Coss = 168 pF).

 

This MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive applications such as on-board chargers and DC-DC converters for electric and hybrid vehicles. It operates within a junction temperature range of -55°C to +175°C.

 

The NVBG045N065SC1 is supplied in a surface-mount D2PAK-7L package (TO-263-8, TO-263CA), offering efficient thermal performance with a junction-to-case thermal resistance of 0.62 °C/W.

NVBG045N065SC1 Quick Information

Product Type: MOSFET
Series: NVBG045N065SC1
Canonical Name: NVBG045N065SC1 N-Channel Silicon Carbide MOSFET
Subcategory: N-Channel

NVBG045N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free 2LI

NVBG045N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVBG045N065SC1 Features

  • 650V drain-to-source voltage rating.
  • 31 mOhm typical on-resistance.
  • 62A continuous drain current.
  • AEC-Q101 Qualified and PPAP Capable.
  • Surface mount D2PAK-7L package.

NVBG045N065SC1 Applications

  • Suitable for automotive on-board chargers.
  • Ideal for EV/HEV DC-DC converters.
  • Used in high-voltage power switching applications.
  • Applicable in industrial motor control circuits.
  • Suitable for high-temperature power environments.

NVBG045N065SC1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVBG045N065SC1 MOSFET?

The drain-to-source voltage (VDSS) is 650 V.

What is the typical on-resistance (RDS(on)) for the NVBG045N065SC1?

The typical on-resistance is 31 mOhm at VGS = 18 V.

What is the continuous drain current of the NVBG045N065SC1 at 25°C?

The continuous drain current (ID) is 62 A at TC = 25°C.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +175°C.

What package type is the NVBG045N065SC1 MOSFET supplied in?

It is supplied in a surface mount D2PAK-7L package.

Is the NVBG045N065SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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