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NVBG025N065SC1 The NVBG025N065SC1 is an N-Channel Silicon Carbide MOSFET from On Semiconductor. It features a 650V drain-to-source voltage and low on-resistance.
Mfr Part #:

NVBG025N065SC1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVBG025N065SC1 is an N-Channel Silicon Carbide MOSFET from On Semiconductor. It features a 650V drain-to-source voltage and low on-resistance.
✓ Total Stock: 800 pcs
$ Price Range: $0.99

NVBG025N065SC1 Available from 1 distributor

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✓ Non-Authorised
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800 pcs
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NVBG025N065SC1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NVBG025N065SC1 Description

Short technical summary and product information.

The NVBG025N065SC1 is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by On Semiconductor. This device is designed for high-performance applications, offering a drain-to-source voltage (VDSS) of 650V.

 

Key electrical characteristics include a typical on-resistance (RDS(on)) of 19 mOhm at 18V gate-source voltage, and 25 mOhm at 15V. It boasts a low gate charge (QG(tot)) of 164 nC and low output capacitance (Coss) of 278 pF. The continuous drain current is rated at 106A at 25°C case temperature, with a maximum power dissipation of 395W.

 

This MOSFET operates within a junction temperature range of -55°C to 175°C. It is 100% avalanche tested and AEC-Q101 qualified, making it suitable for demanding automotive applications.

 

The NVBG025N065SC1 is supplied in a surface-mount D2PAK-7L package, also known as TO-263-8. This package type facilitates integration into various electronic circuits.

NVBG025N065SC1 Quick Information

Product Type: MOSFET
Canonical Name: NVBG025N065SC1 Silicon Carbide MOSFET
Subcategory: N-Channel

NVBG025N065SC1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVBG025N065SC1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVBG025N065SC1 Features

  • 650V drain-to-source voltage rating.
  • Low 19 mOhm typical RDS(on).
  • Low gate charge of 164 nC.
  • High 395W maximum power dissipation.
  • AEC-Q101 Qualified for automotive use.

NVBG025N065SC1 Applications

  • High-voltage power switching circuits
  • Motor drive in industrial applications
  • Power supply regulation
  • High-efficiency power converters

NVBG025N065SC1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NVBG025N065SC1?

The drain-to-source voltage (VDSS) is 650 V.

What is the typical on-resistance for this MOSFET?

The typical on-resistance is 19 mOhm at a gate-source voltage of 18 V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NVBG025N065SC1 supplied in?

It is supplied in a D2PAK-7L package.

Is the NVBG025N065SC1 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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