| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,200 pcs
|
27200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NVBG022N120M3S from On Semiconductor is an N-Channel Silicon Carbide (SiC) MOSFET, part of the EliteSiC M3S family. This device is engineered for high-voltage and high-efficiency applications, featuring a maximum drain-to-source voltage (Vdss) of 1200V.
Key electrical characteristics include a typical on-resistance (RDS(on)) of 22 mOhm at 18V Vgs, with a maximum of 30 mOhm at 40A and 18V Vgs. It supports a continuous drain current of 100A at 25°C and 71A at 100°C, with a pulsed drain current of 297A. The device boasts a low gate charge (Qg) of 142 nC at 18V Vgs and an input capacitance (Ciss) of 3200 pF at 800V Vds.
Operating across a wide temperature range from -55°C to 175°C (TJ), the NVBG022N120M3S is suitable for challenging environments. It is packaged in a D2PAK-7L surface-mount package, offering robust thermal performance with a junction-to-case thermal resistance of 0.34°C/W.
This SiC MOSFET is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications such as onboard chargers and DC/DC converters for electric and hybrid vehicles.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 1200V.
The typical on-resistance (RDS(on)) is 22 mOhm at a gate-to-source voltage of 18V.
The continuous drain current (ID) is 100A at 25°C.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a D2PAK-7L surface mount package.