NVB260N65S3 The ON Semiconductor NVB260N65S3 is an N-Channel MOSFET designed for automotive applications. It features a 650V breakdown voltage and a low Rds(on) of 260mOhm.
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NVB260N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVB260N65S3 is an N-Channel MOSFET designed for automotive applications. It features a 650V breakdown voltage and a low Rds(on) of 260mOhm.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVB260N65S3 Available from 1 distributor

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NVB260N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVB260N65S3 Description

Short technical summary and product information.

The ON Semiconductor NVB260N65S3 is a SUPERFET III N-Channel MOSFET designed for high-efficiency power systems. It offers a 650V drain-to-source voltage and a continuous drain current of 12A at 25°C.

 

Key electrical characteristics include a maximum Rds(on) of 260mOhm at 10V gate drive, a typical gate charge of 24 nC, and an input capacitance of 1010 pF. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is AEC-Q101 qualified, making it suitable for demanding automotive applications such as on-board chargers and DC/DC converters for HEVs. It is supplied in a D2PAK-3 (TO-263-3) surface-mount package.

 

The SUPERFET III technology utilizes charge balance technology for low on-resistance and reduced gate charge, contributing to minimized conduction loss and superior switching performance.

NVB260N65S3 Quick Information

Product Type: MOSFET
Series: SUPERFET III
Canonical Name: NVB260N65S3 N-Channel MOSFET
Subcategory: N-Channel

NVB260N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

NVB260N65S3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVB260N65S3 Features

  • AEC-Q101 Qualified for automotive use.
  • 650V Drain to Source Voltage rating.
  • Low 260mOhm maximum Rds(on).
  • Ultra low gate charge of 24 nC.
  • D2PAK-3 surface-mount package.

NVB260N65S3 Applications

  • High-voltage power switching circuits
  • Industrial power supplies
  • Motor control applications
  • Inverter circuits

NVB260N65S3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVB260N65S3 MOSFET?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the typical on-state resistance (Rds(on)) of the NVB260N65S3?

The typical on-state resistance is 222 mOhm.

What is the continuous drain current for the NVB260N65S3 at 25°C?

The continuous drain current is 12 A at 25°C.

What is the operating temperature range for this MOSFET?

The operating and storage temperature range is -55°C to 150°C.

Is the NVB260N65S3 RoHS compliant?

Yes, the NVB260N65S3 is RoHS3 Compliant.

What package type is the NVB260N65S3 supplied in?

It is supplied in a D2PAK-3 (TO-263-3) surface-mount package.

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