| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,200 pcs
|
7200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVB25P06T4G is a P-Channel MOSFET manufactured by ON Semiconductor, designed for low voltage, high-speed switching applications. It features a maximum drain-to-source voltage (Vdss) of -60V and a continuous drain current (Id) of 27.5A at 25°C ambient temperature. The device offers a low static drain-source on-resistance (Rds On) of 82mOhm at 25A and 10V gate-source voltage.
With a gate-to-source voltage range of ±15V and a gate threshold voltage (Vgs(th)) of up to 4V at 250µA, this MOSFET is suitable for various power control applications. It has an input capacitance (Ciss) of 1680pF at 25V and a gate charge (Qg) of 50nC at 10V.
The operating temperature range is -55°C to +175°C, and it has a maximum power dissipation of 120W at 25°C. The NVB25P06T4G is supplied in a D2PAK (TO-263-3) surface mount package, facilitating integration into compact designs. It is Pb-Free and RoHS compliant.
Typical applications include PWM motor controls, power supplies, converters, and bridge circuits. The device is designed to withstand high energy in avalanche and commutation modes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
27.5 A
65 mOhm
-55°C to +175°C
D2PAK