NVB150N65S3F The NVB150N65S3F is an N-Channel MOSFET from On Semiconductor, designed for high voltage applications. It offers a 650V breakdown voltage and a continuous current rating of 24A.
Mfr Part #:

NVB150N65S3F

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVB150N65S3F is an N-Channel MOSFET from On Semiconductor, designed for high voltage applications. It offers a 650V breakdown voltage and a continuous current rating of 24A.
✓ Total Stock: 6,400 pcs
$ Price Range: $0.99

NVB150N65S3F Available from 1 distributor

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✓ Non-Authorised
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NVB150N65S3F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVB150N65S3F Description

Short technical summary and product information.

The NVB150N65S3F is an N-Channel MOSFET from On Semiconductor, part of the SUPERFET III family. It utilizes charge balance technology for low on-resistance and reduced gate charge. This device features a 650V drain-to-source voltage and a maximum continuous drain current of 24A at 25°C. The typical on-resistance is 114 mOhm, with a maximum of 150mOhm at 12A and 10V gate drive. Its typical gate charge is 43 nC, and it has a typical effective output capacitance of 385 pF.

 

Designed for high efficiency and superior switching performance, the NVB150N65S3F is suitable for various power systems. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 192W at 25°C. The MOSFET is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting.

 

Key electrical characteristics include a gate threshold voltage of 5V at 540µA and a maximum gate-to-source voltage of ±30V. The device is 100% avalanche tested and qualified with AEC-Q101. It is also Pb-Free and RoHS Compliant.

NVB150N65S3F Quick Information

Product Type: MOSFET
Series: SUPERFET III FRFET
Canonical Name: NVB150N65S3F N-Channel MOSFET

NVB150N65S3F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NVB150N65S3F Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVB150N65S3F Features

  • 650V drain-to-source breakdown voltage.
  • 150mOhm maximum on-resistance.
  • 24A continuous drain current.
  • Low gate charge (43nC typical).
  • D2PAK-3 surface mount package.

NVB150N65S3F Applications

  • High-voltage power switching circuits
  • Power conversion and inverters
  • Motor control applications
  • High-voltage switching in industrial equipment

NVB150N65S3F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NVB150N65S3F?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the typical on-resistance of the NVB150N65S3F?

The typical on-resistance is 114 mOhm.

What is the maximum continuous drain current?

The maximum continuous drain current is 24 A at 25°C.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 43 nC at 10V.

What package type is the NVB150N65S3F supplied in?

It is supplied in a D²PAK-3 (TO-263-3) package suitable for surface mounting.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

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