NVB125N65S3 The NVB125N65S3 is an N-Channel MOSFET from On Semiconductor, featuring a 650V drain-source voltage and 24A continuous current. It is designed for automotive applications and comes in a D2PAK package.
Mfr Part #:

NVB125N65S3

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NVB125N65S3 is an N-Channel MOSFET from On Semiconductor, featuring a 650V drain-source voltage and 24A continuous current. It is designed for automotive applications and comes in a D2PAK package.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.99

NVB125N65S3 Available from 2 distributors

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✓ Non-Authorised
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8,000 pcs
8000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NVB125N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVB125N65S3 Description

Short technical summary and product information.

The NVB125N65S3 is a high-voltage N-Channel SUPERFET III MOSFET from ON Semiconductor, utilizing charge balance technology for low on-resistance and reduced gate charge. It offers a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 24A at 25°C. The device boasts a low Rds(on) of 125mOhm at 12A and 10V gate drive, with a typical gate charge (Qg) of 46 nC.

 

This MOSFET is AEC-Q101 qualified, making it suitable for demanding automotive applications such as on-board chargers and DC/DC converters for HEVs. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 181W at 25°C. The device is packaged in a surface-mount D2PAK-3 (TO-263-3) package, facilitating integration into compact designs.

 

Key electrical characteristics include an input capacitance (Ciss) of 1940 pF at 400V and a gate threshold voltage (Vgs(th)) of 4.5V at 590µA. The device is 100% avalanche tested, ensuring reliability under transient stress conditions. It is also Pb-free and RoHS compliant.

NVB125N65S3 Quick Information

Product Type: MOSFET
Series: Easy drive
Canonical Name: NVB125N65S3 N-Channel SUPERFET III MOSFET
Subcategory: N-Channel

NVB125N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVB125N65S3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVB125N65S3 Features

  • 650V drain-source voltage rating.
  • 24A continuous drain current.
  • 125mOhm maximum Rds(on).
  • AEC-Q101 qualified for automotive.
  • D2PAK surface mount package.

NVB125N65S3 Applications

  • Automotive on-board chargers.
  • Automotive DC/DC converters.
  • High voltage power systems.
  • Efficient power switching.

NVB125N65S3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NVB125N65S3?

The maximum drain-source voltage (Vds) is 650 V.

What is the continuous drain current rating?

The continuous drain current is 24 A at 25°C.

What is the typical on-resistance (Rds(on))?

The typical on-resistance is 105 mOhm.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NVB125N65S3 supplied in?

It is supplied in a D2PAK-3 (TO-263-3) surface mount package.

Is this MOSFET AEC-Q101 qualified?

Yes, the NVB125N65S3 is AEC-Q101 qualified.

What are the main applications for this MOSFET?

It is used in automotive on-board chargers and automotive DC/DC converters for HEVs.

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