NVB099N65S3 The ON Semiconductor NVB099N65S3 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a low 99mOhm on-state resistance.
Mfr Part #:

NVB099N65S3

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NVB099N65S3 is an N-Channel MOSFET designed for power applications. It features a 650V drain-source voltage and a low 99mOhm on-state resistance.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NVB099N65S3 Available from 1 distributor

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NVB099N65S3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NVB099N65S3 Description

Short technical summary and product information.

The ON Semiconductor NVB099N65S3 is a high-performance N-Channel MOSFET belonging to the SUPERFET/C0041 III family. It is designed for demanding power applications, offering a robust 650V drain-to-source voltage and a continuous drain current of 30A.

 

Key electrical characteristics include a maximum on-state resistance of 99mOhm at 15A and 10V, and a gate charge of 61nC at 10V. The MOSFET operates with a gate-source voltage range of ±30V and has a threshold voltage of 4.5V at 740µA. Its input capacitance is rated at 2480pF at 400V.

 

This device is housed in a TO-263-3, D²Pak package, suitable for surface mounting. It operates within a wide temperature range of -55°C to 150°C (TJ) and can dissipate up to 227W of power. The NVB099N65S3 is RoHS3 compliant, ensuring adherence to environmental standards in electronic designs.

NVB099N65S3 Quick Information

Product Type: MOSFET
Series: SUPERFET/C0041 III
Canonical Name: NVB099N65S3 N-Channel MOSFET
Subcategory: N-Channel

NVB099N65S3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NVB099N65S3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NVB099N65S3 Features

  • 650V drain-source breakdown voltage.
  • 30A continuous drain current.
  • 99mOhm maximum on-state resistance.
  • Surface mount D2PAK package.
  • Operates to 150°C.

NVB099N65S3 Applications

  • Suitable for power supply circuits.
  • Used in motor control applications.
  • Ideal for high voltage switching.
  • Applicable in power factor correction.

NVB099N65S3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the NVB099N65S3?

The drain-source breakdown voltage is 650V.

What is the maximum continuous drain current?

The maximum continuous drain current is 30A.

What is the on-state resistance of this MOSFET?

The on-state resistance is 99mOhm at 15A and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the NVB099N65S3 in?

It is in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

How is the NVB099N65S3 mounted?

It is a surface mount device.

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