NVB082N65S3F

The ON Semiconductor NVB082N65S3F is a high-performance N-Channel MOSFET belonging to the SuperFET3 series. It features a drain-source breakdown voltage of 650V and a continuous drain current rating of 40A, making it suitable for various power switching applications.

With a low drain-source on-resistance (Rds(on)) of 82 mOhms, this MOSFET minimizes conduction losses. The gate-source threshold voltage is 3V, and it operates with a gate-source voltage of up to 30V. The device has a maximum operating temperature of 150C and a minimum operating temperature of -55C, with a power dissipation of 313W.

Packaged in a D2PAK surface-mount case, the NVB082N65S3F is designed for efficient thermal management. The mounting style is SMD/SMT, and it comes in cut tape packaging with a factory pack quantity of 800 units. Its silicon technology and enhancement mode channel make it a versatile component for power electronics.

Key electrical characteristics include a gate charge of 81 nC, a minimum forward transconductance of 24S, and switching times such as a fall time of 16ns, rise time of 29ns, typical turn-off delay of 76ns, and typical turn-on delay of 31ns.