| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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728 pcs
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728 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVATS68301PZT4G is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 100V and can handle a continuous current of 31A. The on-resistance (Rds On) is specified at a maximum of 75mOhm at 14A and 10V gate-source voltage.
This MOSFET has an input capacitance (Ciss) of 2850 pF at 20V and a gate charge (Qg) of 55 nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3.5V at 1mA, with a maximum gate-source voltage (Vgs) of ±20V. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 84W (Tc).
The NVATS68301PZT4G utilizes Metal Oxide semiconductor technology. It is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 configuration, suitable for surface mounting. The supplier device package is DPAK.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1 Unlimited, and REACH Unaffected status. These specifications make it suitable for applications requiring robust power switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NVATS68301PZT4G is 100V.
The NVATS68301PZT4G MOSFET has a maximum continuous current rating of 31A.
The maximum on-resistance (Rds On) for the NVATS68301PZT4G is 75mOhm when measured at 14A and 10V.
The operating temperature range for the NVATS68301PZT4G is -55°C to 175°C (TJ).
The NVATS68301PZT4G MOSFET is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting.