| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVATS5A112PLZT4G is a P-Channel MOSFET designed for various applications. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 27A at a case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 43mOhm at 13A and 10V Vgs, and a gate threshold voltage (Vgs(th)) of 2.6V at 1mA. The input capacitance (Ciss) is 1450pF at 20V Vds, and the gate charge (Qg) is 33.5nC at 10V Vgs. The maximum gate-source voltage (Vgs) is ±20V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, suitable for surface mounting. The maximum power dissipation is rated at 48W (Tc).
The NVATS5A112PLZT4G is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 27A.
The Rds On is a maximum of 43mOhm at 13A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 175°C (TJ).
It is in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
Yes, it is RoHS3 compliant.
The MSL is 1.