| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
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750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NVATS5A108PLZT4G is a P-Channel MOSFET with a drain-source voltage (Vdss) of 40V. It is designed for surface mount applications and comes in an ATPAK-3 package.
Key electrical characteristics include a maximum continuous current of 77A (Ta) and a maximum on-resistance (Rds On) of 10.4mOhm at 35A and 10V Vgs. The gate charge (Qg) is 79.5 nC maximum at 10V Vgs, and the gate-source voltage (Vgs) has a maximum rating of ±20V. The threshold voltage (Vgs(th)) is 2.6V maximum at 1mA.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). Its technology is MOSFET (Metal Oxide), and it is suitable for applications requiring efficient power switching. The part is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
The maximum continuous current is 77A.
The Rds On is a maximum of 10.4mOhm at 35A and 10V Vgs.
The operating temperature range is -55°C to 175°C (TJ).
It is a P-Channel MOSFET.
It is supplied in the ATPAK-3 package and is suitable for surface mounting.