Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
84,000 pcs
|
84000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Applications | |
| Collector Current (Maximum @ Continuous) | |
| Collector Current (Maximum @ Peak) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Continuous Drain Current (Maximum @ TA = +85 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous source current | |
| Current Rating (Amps) | |
| Drain-source voltage | |
| Emitter-Base Voltage | |
| Junction To Ambient Thermal Resistance (Typical @ 5 sec) | |
| Junction To Foot Thermal Resistance (Typical/Maximum @ Steady State) | |
| Junction-to-Ambient Thermal Resistance (Typical @ Steady-State) | |
| Lead Spacing | |
| Maximum Power Dissipation (Maximum @ TA = 25 °C) | |
| Maximum Power Dissipation (Maximum @ TA = 85 °C) | |
| Mounting Type | |
| Operating Junction and Storage Temperature Range | |
| Supplier Device Package | |
| Tape/Reel Status | |
| Total Device Dissipation | |
| Transistor Type | |
| Voltage |
The NUS5530MNR2G from On Semiconductor is an integrated device combining a 20V P-Channel MOSFET with a PNP Silicon Low VCE(sat) switching transistor. This integration enhances safety and reduces board space, making it suitable for battery-powered portable electronics.
Key electrical specifications include a Drain-Source Voltage of -20V for the P-Channel FET and a Collector-Emitter Voltage of -35V for the PNP transistor. The device offers a continuous drain current of up to -5.3A at 25°C and a continuous collector current of -2.0A. Its low RDS(on) and low VCE(sat) contribute to higher efficiency, extending battery life.
The NUS5530MNR2G is housed in a compact 8-DFN (3.3x3.3) surface-mount package. This package type, along with its logic-level gate drive capability for the MOSFET, facilitates integration into space-constrained designs. The device is Pb-Free and RoHS3 compliant.
Applications for this integrated transistor include power management in portable and battery-powered products such as cellular telephones, cordless telephones, and PCMCIA cards. Its design prioritizes efficiency and accuracy for these demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 35V for the PNP transistor and 20V for the P-Channel MOSFET.
The NUS5530MNR2G is supplied in an 8-DFN (3.3x3.3) package.
The operating junction and storage temperature range is -55°C to +150°C.
The device is RoHS3 Compliant.