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NUS5530MNR2G The On Semiconductor NUS5530MNR2G is an integrated power MOSFET with a PNP switching transistor, designed for power management in portable devices. It features a 20V P-Channel FET and a 35V PNP transistor in an 8-DFN package.
Mfr Part #:

NUS5530MNR2G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NUS5530MNR2G is an integrated power MOSFET with a PNP switching transistor, designed for power management in portable devices. It features a 20V P-Channel FET and a 35V PNP transistor in an 8-DFN package.
✓ Total Stock: 84,150 pcs
$ Price Range: $0.99

NUS5530MNR2G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
84,000 pcs
On Request
84000 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
150 pcs
On Request
150 pcs On Request 1 On Request On Request 18+ On Request On Request
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NUS5530MNR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NUS5530MNR2G Description

Short technical summary and product information.

The NUS5530MNR2G from On Semiconductor is an integrated device combining a 20V P-Channel MOSFET with a PNP Silicon Low VCE(sat) switching transistor. This integration enhances safety and reduces board space, making it suitable for battery-powered portable electronics.

 

Key electrical specifications include a Drain-Source Voltage of -20V for the P-Channel FET and a Collector-Emitter Voltage of -35V for the PNP transistor. The device offers a continuous drain current of up to -5.3A at 25°C and a continuous collector current of -2.0A. Its low RDS(on) and low VCE(sat) contribute to higher efficiency, extending battery life.

 

The NUS5530MNR2G is housed in a compact 8-DFN (3.3x3.3) surface-mount package. This package type, along with its logic-level gate drive capability for the MOSFET, facilitates integration into space-constrained designs. The device is Pb-Free and RoHS3 compliant.

 

Applications for this integrated transistor include power management in portable and battery-powered products such as cellular telephones, cordless telephones, and PCMCIA cards. Its design prioritizes efficiency and accuracy for these demanding applications.

NUS5530MNR2G Quick Information

Product Type: Integrated Circuit
Canonical Name: Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

NUS5530MNR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NUS5530MNR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NUS5530MNR2G Features

  • Integrated 20V P-Channel MOSFET and 35V PNP transistor.
  • Low RDS(on) and low VCE(sat) for efficiency.
  • Logic level gate drive for MOSFET.
  • Compact 8-DFN surface mount package.
  • Designed for portable and battery-powered products.

NUS5530MNR2G Applications

  • Power management in portable electronics.
  • Used in cellular and cordless telephones.
  • Suitable for PCMCIA card applications.
  • Enhances battery life in mobile devices.

NUS5530MNR2G FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the NUS5530MNR2G?

The operating voltage is 35V for the PNP transistor and 20V for the P-Channel MOSFET.

What package type is the NUS5530MNR2G supplied in?

The NUS5530MNR2G is supplied in an 8-DFN (3.3x3.3) package.

What is the operating temperature range for this device?

The operating junction and storage temperature range is -55°C to +150°C.

Is the NUS5530MNR2G RoHS compliant?

The device is RoHS3 Compliant.

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