| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 701 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Junction Temperature | |
| Mounting Type | |
| Power | |
| Resistor | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The NUS2401SNT1G from ON Semiconductor is a pre-biased transistor array featuring integrated PNP and NPN transistors. This device is designed to replace discrete transistor and resistor networks, reducing board space and component count. It operates with a maximum collector-emitter voltage of 50V and can handle a continuous collector current of 200mA.
The transistor array has a power dissipation rating of 350mW and comes in a compact SC-74 surface mount package. The integrated resistors have values of 175Ω and 10kΩ. This configuration simplifies circuitry design for applications such as audio muting and general drive circuits.
Key electrical characteristics include a collector-emitter saturation voltage of 250mV at specified currents. The device is suitable for low-power surface mount applications. Its integrated design makes it a cost-effective solution for various consumer and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the NUS2401SNT1G is 50V.
The continuous collector current (IC) rating for the NUS2401SNT1G is 200mA.
The power dissipation (PD) for the NUS2401SNT1G is 350mW.
The NUS2401SNT1G is supplied in an SC-74 package.
The integrated resistor values are 175Ω and 10kΩ.
The saturation voltage is 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA.