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NTZD5110NT1G The On Semiconductor NTZD5110NT1G is a Dual N-Channel MOSFET designed for load and power switches. It features a 60V drain-to-source voltage and a compact SOT-563 package.
Mfr Part #:

NTZD5110NT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTZD5110NT1G is a Dual N-Channel MOSFET designed for load and power switches. It features a 60V drain-to-source voltage and a compact SOT-563 package.
✓ Total Stock: 39,137 pcs
$ Price Range: $0.99

NTZD5110NT1G Available from 4 distributors

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✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

NTZD5110NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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NTZD5110NT1G Description

Short technical summary and product information.

The NTZD5110NT1G from On Semiconductor is a dual N-channel MOSFET designed for applications such as load/power switches and driver circuits. It offers a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 294mA at 25°C. The device features a low threshold voltage and ESD protection on the gate.

 

This MOSFET is housed in a small SOT-563 package, measuring 1.6 x 1.6 mm, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum Rds(on) of 1.6 Ohm at 500mA and 10V, and a gate charge (Qg) of 0.7nC at 4.5V.

 

The NTZD5110NT1G is designed for efficiency and reliability in battery-operated systems, cell phones, digital cameras, and PDAs. It is also noted as a Pb-Free device, aligning with environmental standards.

NTZD5110NT1G Quick Information

Product Type: MOSFET Array
Canonical Name: NTZD5110NT1G Dual N-Channel MOSFET
Subcategory: Arrays

NTZD5110NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Devices

NTZD5110NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTZD5110NT1G Features

  • Dual N-Channel MOSFET configuration.
  • 60V drain-to-source voltage rating.
  • 294mA continuous drain current.
  • Compact SOT-563 surface mount package.
  • ESD protected gate for enhanced reliability.

NTZD5110NT1G Applications

  • Suitable for load and power switches.
  • Used in driver circuits for relays.
  • Ideal for battery management systems.
  • Applications in mobile devices and cameras.

NTZD5110NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) of the NTZD5110NT1G?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current for the NTZD5110NT1G at 25°C?

The continuous drain current is 310mA at 25°C.

What is the maximum Rds On for the NTZD5110NT1G?

The maximum Rds On is 1.6 Ohm at 500mA and 10V.

What is the operating temperature range for the NTZD5110NT1G?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTZD5110NT1G supplied in?

The NTZD5110NT1G is supplied in a SOT-563 package.

Is the NTZD5110NT1G RoHS compliant?

Yes, the NTZD5110NT1G is RoHS3 compliant.

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