NTZD3155CT2G The NTZD3155CT2G is a complementary N-channel and P-channel MOSFET from ON Semiconductor. It features a 20V Drain-to-Source Voltage and is housed in a compact SOT-563 package.
Mfr Part #:

NTZD3155CT2G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTZD3155CT2G is a complementary N-channel and P-channel MOSFET from ON Semiconductor. It features a 20V Drain-to-Source Voltage and is housed in a compact SOT-563 package.
✓ Total Stock: 346,120 pcs
$ Price Range: $0.99

NTZD3155CT2G Available from 5 distributors

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✓ Non-Authorised

NTZD3155CT2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTZD3155CT2G Description

Short technical summary and product information.

The NTZD3155CT2G is a complementary MOSFET array from ON Semiconductor, featuring both N-channel and P-channel transistors in a single SOT-563 package. This device is designed with leading trench technology for low RDS(on) performance, offering high efficiency for DC-DC conversion circuits, load/power switching with level shift, and battery-operated systems.

 

Key electrical specifications include a Drain-to-Source Voltage (VDSS) of 20V for the N-channel and -20V for the P-channel. The continuous drain current is rated at 540mA for the N-channel and -430mA for the P-channel at 25°C. The typical ON-resistance (RDS(on)) is as low as 0.4 Ohm at 540mA/4.5V for the N-channel and 0.5 Ohm at -430mA/-4.5V for the P-channel. It also features a low threshold voltage and an ESD protected gate, making it suitable for high-speed circuits.

 

The MOSFET is available in a small footprint SOT-563 package, measuring 1.6 x 1.6 mm, ideal for space-constrained applications like cell phones, MP3 players, digital cameras, and PDAs. It operates over a wide temperature range of -55°C to 150°C (TJ) and is RoHS compliant, Pb-Free, and Halogen Free.

 

Mounting is via surface mount technology. The device offers high efficiency system performance and is designed for applications requiring efficient power management and switching.

NTZD3155CT2G Quick Information

Product Type: MOSFET
Series: NTZD3155C/D
Canonical Name: NTZD3155CT2G Complementary MOSFET with ESD Protection
Subcategory: Complementary

NTZD3155CT2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTZD3155CT2G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTZD3155CT2G Features

  • Complementary N-channel and P-channel MOSFETs.
  • 20V Drain-to-Source Voltage rating.
  • Low RDS(on) performance.
  • Compact SOT-563 package.
  • ESD protected gate.

NTZD3155CT2G Applications

  • Ideal for DC-DC conversion circuits.
  • Suitable for load and power switching.
  • Used in battery operated systems.
  • Applicable in high speed circuits.
  • Designed for mobile devices.

NTZD3155CT2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage for the NTZD3155CT2G?

The Drain-to-Source Voltage (VDSS) is 20V for the N-channel and -20V for the P-channel.

What is the continuous drain current rating?

The continuous drain current is 540mA for the N-channel and -430mA for the P-channel at 25°C.

What is the typical ON-resistance (RDS(on))?

The typical ON-resistance is 0.4 Ohm at 540mA/4.5V for the N-channel and 0.5 Ohm at -430mA/-4.5V for the P-channel.

What package type is the NTZD3155CT2G available in?

The NTZD3155CT2G is available in a SOT-563 package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

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