| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
664,000 pcs
|
664000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTZD3154NT1H from On Semiconductor is a dual N-channel MOSFET suitable for various load and power switching applications. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 540mA at 25°C. Its low Rds(on) of 550mOhm at 4.5V gate-source voltage contributes to improved system efficiency.
The MOSFET operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a compact SOT-563 package, making it ideal for space-constrained designs. The device also includes ESD protection on the gate, enhancing its robustness.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 1V at 250µA and an input capacitance (Ciss) of 150pF at 16V. The device is Pb-free and Halogen-free, complying with RoHS standards.
Applications for the NTZD3154NT1H include power supply converter circuits, battery management systems, and use in portable electronics such as cell phones, digital cameras, and PDAs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 20V.
It is housed in a SOT-563 package.
The maximum continuous drain current is 540mA.
-55°C to 150°C.
Yes, it is RoHS3 compliant.
The gate-to-source voltage is ±7V.