| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,301 pcs
|
6301 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The On Semiconductor NTTS2P03R2G is a P-Channel enhancement mode MOSFET designed for power management applications in portable and battery-powered devices. It offers ultra low RDS(on) for higher efficiency, extending battery life.
Key electrical specifications include a drain-to-source voltage (Vdss) of -30V and a continuous drain current of up to -2.48A at 25°C. The Rds On is rated at a maximum of 85mOhm at 2.48A and 10V Vgs. The gate-to-source voltage range is ±20V, with a threshold voltage of 3V at 250µA. Input capacitance (Ciss) is 500pF at 24V, and gate charge (Qg) is 22nC at 4.5V.
This MOSFET is housed in a miniature Micro8 surface mount package, specifically an 8-MSOP. The operating temperature range is -55°C to 150°C. It is available in a Pb-free package.
Applications include power management in cellular and cordless telephones, and PCMCIA cards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V
-2.48 A
85mOhm @ 2.48A, 10V
-55°C ~ 150°C
8-MSOP
RoHS3 Compliant
1 Unlimited