| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
413 pcs
|
413 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTS2P03R2 from On Semiconductor is a P-Channel MOSFET designed for power management applications in portable and battery-powered products. This device features a drain-to-source voltage of 30V and a continuous drain current of 2.1A at 25°C ambient temperature.
Key electrical characteristics include an on-resistance (Rds On) of 85mOhm at 2.48A and 10V gate-source voltage, and a gate threshold voltage of 3V at 250µA. The MOSFET operates within a temperature range of -55°C to 150°C.
Packaged in a miniature Micro8 surface mount package, the NTTS2P03R2 is suitable for space-constrained designs. Its features include ultra low Rds(on) and higher efficiency, contributing to extended battery life in applications such as cellular telephones and PCMCIA cards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is -30V.
The maximum Rds On is 85 milliohms at Id = 2.48A and Vgs = 10V.
The continuous drain current is 2.1A at 25°C.
It is available in 8-TSSOP and 8-MSOP surface-mount packages.
It operates within a temperature range of -55°C to 150°C.
Yes, it is RoHS3 compliant.