| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS8D1N08HTAG is a high-performance N-Channel MOSFET manufactured by ON Semiconductor. It offers a drain-source voltage rating of 80V and can handle continuous currents of 14A (at 25°C ambient) or 61A (at 25°C case temperature). The MOSFET exhibits a low on-resistance of 8.3mOhm at 16A and 10V gate-source voltage, contributing to efficient power switching.
This device features a gate charge of 23nC and an input capacitance of 1450pF, with a gate threshold voltage of 4V. It operates within a temperature range of -55°C to 150°C (TJ). The NTTFS8D1N08HTAG is packaged in an 8-PowerWDFN (3.3x3.3mm) format and is designed for surface mount installation.
With its robust electrical characteristics and compact package, the NTTFS8D1N08HTAG is suitable for various power management applications where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTTFS8D1N08HTAG is 80V.
The maximum on-resistance (Rds On) is 8.3mOhm at 16A and 10V.
The continuous current rating is 14A at 25°C ambient and 61A at 25°C case temperature.
The operating temperature range is -55°C to 150°C (TJ).
It is an N-Channel MOSFET.
It is supplied in an 8-PowerWDFN package.