| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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25,500 pcs
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25500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS6H888NTAG from ON Semiconductor is a single N-Channel MOSFET designed for power switching applications. It offers a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds On) of 55mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 5A.
This MOSFET has a continuous drain current rating of 4.7A when measured at ambient temperature (Ta) and 12A at case temperature (Tc). The maximum power dissipation is 2.9W at Ta and 18W at Tc. It operates within a temperature range of -55°C to 175°C (TJ).
The device is housed in an 8-PowerWDFN package with surface mount technology. Its small footprint and efficient performance make it suitable for compact designs requiring minimal conduction and driver losses.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain to source voltage is 80 V.
The maximum gate to source voltage is ±20 V.
The maximum gate threshold voltage is 4 V at 15 µA.
It comes in an 8-PowerWDFN surface-mount package measuring 3.3x3.3 mm.
-55°C to 175°C.
Yes, it is RoHS3 compliant.