NTTFS6H880NLTAG The ON Semiconductor NTTFS6H880NLTAG is an N-Channel MOSFET designed for power applications. It features 80V drain-to-source voltage and a low on-resistance.
Mfr Part #:

NTTFS6H880NLTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTTFS6H880NLTAG is an N-Channel MOSFET designed for power applications. It features 80V drain-to-source voltage and a low on-resistance.
✓ Total Stock: 8,175 pcs
$ Price Range: $0.99

NTTFS6H880NLTAG Available from 1 distributor

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✓ Non-Authorised
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NTTFS6H880NLTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS6H880NLTAG Description

Short technical summary and product information.

The NTTFS6H880NLTAG from ON Semiconductor is a single N-Channel MOSFET designed for efficient power management. This device boasts a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds(on)) of 29mOhm at 5A and 10V gate drive, minimizing conduction losses.

 

With a continuous drain current rating of 6.6A at ambient temperature and 22A at case temperature, it is suitable for various power switching applications. The MOSFET offers a maximum power dissipation of 3.1W at ambient temperature and 33W at case temperature.

 

Packaged in an 8-WDFN (3.3x3.3 mm) surface-mount package, the NTTFS6H880NLTAG is designed for compact applications. It operates within a temperature range of -55°C to 175°C (TJ). The device is Pb-Free and RoHS Compliant.

 

Key electrical characteristics include an input capacitance (Ciss) of 431pF at 40V and a gate charge (Qg) of 9nC at 10V, contributing to minimized driver losses. The gate-to-source voltage (Vgs) maximum is ±20V, and the gate threshold voltage (Vgs(th)) is 2V at 20µA.

NTTFS6H880NLTAG Quick Information

Product Type: MOSFET
Canonical Name: NTTFS6H880NLTAG N-Channel MOSFET
Subcategory: N-Channel

NTTFS6H880NLTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTTFS6H880NLTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS6H880NLTAG Features

  • 80V drain-to-source voltage rating.
  • Low 29mOhm on-resistance at 10V.
  • High current capability up to 22A.
  • Compact 8-WDFN surface-mount package.
  • Wide operating temperature range.

NTTFS6H880NLTAG Applications

  • Suitable for power switching circuits.
  • Used in compact electronic designs.
  • Efficient power management applications.
  • Low conduction loss designs.

NTTFS6H880NLTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTTFS6H880NLTAG MOSFET?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum on-resistance for the NTTFS6H880NLTAG?

The maximum on-resistance is 29mOhm at 5A and 10V gate drive.

What is the continuous drain current rating?

The continuous drain current is 6.6A at ambient temperature and 22A at case temperature.

What is the package type for the NTTFS6H880NLTAG?

It is supplied in an 8-WDFN package suitable for surface mounting.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

Is the NTTFS6H880NLTAG RoHS compliant?

Yes, the device is RoHS3 Compliant.

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