NTTFS6H860NTAG The On Semiconductor NTTFS6H860NTAG is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 80V and a low on-resistance of 21.1mOhm.
Mfr Part #:

NTTFS6H860NTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTTFS6H860NTAG is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 80V and a low on-resistance of 21.1mOhm.
✓ Total Stock: 27,000 pcs
$ Price Range: $0.99

NTTFS6H860NTAG Available from 1 distributor

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✓ Non-Authorised
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NTTFS6H860NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS6H860NTAG Description

Short technical summary and product information.

The NTTFS6H860NTAG from On Semiconductor is a single N-Channel MOSFET designed for efficient power management. This device features a drain-to-source voltage (Vdss) of 80V and a maximum on-resistance (Rds(on)) of 21.1mOhm at a gate-to-source voltage of 10V and a drain current of 5A. It can handle continuous drain currents of up to 8A at ambient temperature and 30A at case temperature.

 

With a power dissipation capability of 3.1W at ambient temperature and 46W at case temperature, the NTTFS6H860NTAG is suitable for various power applications. The operating temperature range is from -55°C to +175°C (TJ). The MOSFET is housed in a compact 8-WDFN package with surface mount mounting type, measuring 3.3x3.3mm.

 

Key electrical characteristics include an input capacitance of 510pF at 40V and a gate charge of 8.7nC at 10V. The device is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs. Its low Rds(on) minimizes conduction losses, and low capacitance helps reduce driver losses, contributing to overall system efficiency.

NTTFS6H860NTAG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

NTTFS6H860NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS6H860NTAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS6H860NTAG Features

  • 80V drain-to-source voltage rating.
  • Low 21.1mOhm on-resistance.
  • Handles 8A (Ta) and 30A (Tc) current.
  • Compact 8-WDFN surface mount package.
  • Pb-Free and RoHS compliant.

NTTFS6H860NTAG Applications

  • Suitable for power switching applications.
  • Efficient for DC-DC converters.
  • Used in power management circuits.
  • Ideal for low-voltage power supplies.

NTTFS6H860NTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTTFS6H860NTAG MOSFET?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum on-resistance for the NTTFS6H860NTAG?

The maximum on-resistance is 21.1mOhm at 5A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 8A at ambient temperature and 30A at case temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTTFS6H860NTAG supplied in?

It is supplied in an 8-WDFN package with surface mount capability.

Is the NTTFS6H860NTAG RoHS compliant?

Yes, the device is RoHS3 Compliant.

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