| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44,562 pcs
|
44562 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,777 pcs
|
2777 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS6H860NLTAG is a power MOSFET from ON Semiconductor designed for efficient power management. This N-Channel device offers a drain-to-source voltage (Vds) of 80V and can handle continuous drain currents of up to 30A at case temperature and 8.1A at ambient temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 20mOhm at 5A and 10V, and a gate-to-source voltage threshold (Vgs(th)) of 2V at 30µA. The input capacitance (Ciss) is 610pF at 40V, and the gate charge (Qg) is 12nC at 10V, contributing to minimized driver losses.
With a maximum power dissipation of 42W at case temperature and 3.1W at ambient temperature, this MOSFET is suitable for various power applications. It operates within a wide temperature range of -55°C to 175°C. The device is housed in an 8-WDFN (3.3x3.3 mm) surface-mount package, facilitating compact design and efficient thermal management.
This MOSFET is Pb-Free and RoHS compliant, making it suitable for environmentally conscious designs. Its robust construction and performance specifications make it a reliable choice for power switching and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 80V.
The maximum continuous drain current is 30A at case temperature and 8.1A at ambient temperature.
The Rds(on) is a maximum of 20mOhm at 5A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-WDFN (3.3x3.3 mm) package and is surface-mounted.
Yes, the device is RoHS3 Compliant and Pb-Free.