NTTFS6H850NTAG The On Semiconductor NTTFS6H850NTAG is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 80V and a low on-resistance of 9.5mOhm.
Mfr Part #:

NTTFS6H850NTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTTFS6H850NTAG is an N-Channel MOSFET designed for power applications. It offers a drain-to-source voltage of 80V and a low on-resistance of 9.5mOhm.
✓ Total Stock: 14,777 pcs
$ Price Range: $1.10

NTTFS6H850NTAG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
14,777 pcs
14777 pcs On Request 1 On Request On Request On Request On Request On Request

NTTFS6H850NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS6H850NTAG Description

Short technical summary and product information.

The NTTFS6H850NTAG from On Semiconductor is a single N-Channel MOSFET designed for efficient power management. It features a drain-to-source voltage (Vdss) of 80V and a maximum on-resistance (Rds On) of 9.5mOhm at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 10A.

 

This MOSFET supports continuous drain currents of 11A when measured at the ambient temperature (Ta) of 25°C and 68A when measured at the case temperature (Tc) of 25°C. Its power dissipation capabilities are rated at 3.2W (Ta) and 107W (Tc).

 

The device operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-WDFN package with a surface mount type, making it suitable for compact designs. Key electrical characteristics include an input capacitance of 1140 pF at 40V and a gate charge of 19 nC at 10V. The device is also RoHS compliant.

NTTFS6H850NTAG Quick Information

Product Type: MOSFET
Series: NTTFS6H850NTAG
Canonical Name: N-Channel MOSFET
Subcategory: Single FETs

NTTFS6H850NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS6H850NTAG Estimated Pricing

Qty Low High
1+ $1.10 $1.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS6H850NTAG Features

  • 80V drain-to-source voltage rating.
  • Low 9.5mOhm on-resistance.
  • High current capability up to 68A.
  • Compact 8-WDFN surface mount package.
  • Wide operating temperature range.

NTTFS6H850NTAG Applications

  • Suitable for power supply switching circuits
  • Used in motor control modules
  • Ideal for load switching applications
  • Designed for compact, high-efficiency designs

NTTFS6H850NTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTTFS6H850NTAG MOSFET?

The drain-to-source voltage (Vds) is 80V.

What is the maximum on-resistance for the NTTFS6H850NTAG?

The maximum on-resistance is 9.5mOhm at 10A drain current and 10V gate-to-source voltage.

What is the continuous drain current rating?

The continuous drain current is 11A at 25°C ambient temperature and 68A at 25°C case temperature.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTTFS6H850NTAG MOSFET supplied in?

It is supplied in an 8-WDFN package for surface mounting.

Is the NTTFS6H850NTAG MOSFET RoHS compliant?

Yes, the device is RoHS3 Compliant.

Home
Account

Categories