| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
112,495 pcs
|
112495 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
545 pcs
|
545 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS5826NLTAG is a single N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage (Vds) of 60V and a continuous drain current of 8A at 25°C ambient temperature. The MOSFET has a low on-resistance of 24mOhm at 7.5A and 10V gate-to-source voltage, contributing to efficient power management.
With a maximum power dissipation of 3.1W at 25°C ambient temperature and 19W at 25°C case temperature, this device is suitable for various power applications. It operates within a junction temperature range of -55°C to 175°C.
The NTTFS5826NLTAG is supplied in an 8-WDFN package with surface mount mounting type. The small footprint of the 3.3 x 3.3 mm package makes it ideal for compact designs. Key electrical characteristics include a gate charge of 25 nC at 10V and an input capacitance of 850 pF at 25V.
This MOSFET is designed for applications such as motor drivers, DC-DC converters, synchronous rectification, and general power management. It is constructed using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 60V.
The maximum continuous drain current is 8A at 25°C ambient temperature.
The on-resistance (Rds(on)) is a maximum of 24mOhm at 7.5A drain current and 10V gate-to-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-WDFN package with surface mount capability.