NTTFS4H05NTAG The On Semiconductor NTTFS4H05NTAG is an N-Channel MOSFET designed for high-performance applications. It features a 25V drain-to-source voltage and a continuous drain current of up to 94A.
Mfr Part #:

NTTFS4H05NTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTTFS4H05NTAG is an N-Channel MOSFET designed for high-performance applications. It features a 25V drain-to-source voltage and a continuous drain current of up to 94A.
✓ Total Stock: 5,433 pcs
$ Price Range: $0.99

NTTFS4H05NTAG Available from 1 distributor

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✓ Non-Authorised
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NTTFS4H05NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS4H05NTAG Description

Short technical summary and product information.

The NTTFS4H05NTAG from On Semiconductor is a power MOSFET designed for efficient operation in demanding applications. This N-Channel MOSFET offers a maximum drain-to-source voltage of 25V and can handle a continuous drain current of up to 94A at 25°C case temperature, with a lower rating of 22.4A at 25°C ambient temperature. Its low on-resistance of 3.3mOhm at 10V gate-to-source voltage minimizes conduction losses.

 

Optimized for reduced conduction and switching losses, the NTTFS4H05NTAG is suitable for high-performance DC-DC converters, system voltage rails, servers, and point-of-load applications. The device operates at a maximum junction temperature of 150°C and comes in an 8-WDFN surface-mount package measuring 3.3x3.3mm.

 

Key electrical characteristics include a gate charge of 18.9 nC at 10V and an input capacitance of 1205 pF at 12V. The device is Pb-free and halogen-free, complying with RoHS standards.

NTTFS4H05NTAG Quick Information

Product Type: MOSFET
Series: NTTFS4H05NTAG
Canonical Name: NTTFS4H05NTAG N-Channel MOSFET
Subcategory: N-Channel

NTTFS4H05NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS4H05NTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS4H05NTAG Features

  • 25V drain-to-source voltage rating.
  • 94A continuous drain current (Tc).
  • Low 3.3mOhm Rds(on) at 10Vgs.
  • Optimized for low conduction losses.
  • 8-WDFN surface-mount package.

NTTFS4H05NTAG Applications

  • Suitable for DC-DC converters.
  • Used in system voltage rails.
  • Ideal for server applications.
  • Applied in point-of-load designs.
  • Designed for telecom infrastructure.

NTTFS4H05NTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTTFS4H05NTAG?

The maximum drain-to-source voltage (Vds) for the NTTFS4H05NTAG is 25V.

What is the continuous drain current rating of the NTTFS4H05NTAG?

The NTTFS4H05NTAG has a continuous drain current rating of 22.4A at 25°C ambient and 94A at 25°C case temperature.

What is the maximum on-resistance (Rds) for the NTTFS4H05NTAG?

The maximum on-resistance (Rds) for the NTTFS4H05NTAG is 3.3mOhm at 30A drain current and 10V gate-to-source voltage.

What is the package type for the NTTFS4H05NTAG?

The NTTFS4H05NTAG is supplied in an 8-WDFN (3.3x3.3mm) surface-mount package.

What is the maximum operating temperature for this MOSFET?

The maximum operating junction temperature (TJ) for the NTTFS4H05NTAG is 150°C.

Is the NTTFS4H05NTAG RoHS compliant?

Yes, the NTTFS4H05NTAG is RoHS3 Compliant.

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