| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,080 pcs
|
3080 pcs | On Request | 1 | On Request | On Request | 1733 | On Request | On Request | |
|
155 pcs
|
155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number NTTFS4C13NTAG from On Semiconductor, is designed for efficient power delivery. It offers a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 7.2A when measured at 25°C ambient temperature (Ta). The device boasts a low Rds(on) of 9.4mOhm at a drain current of 30A and a gate-source voltage of 10V, minimizing conduction losses.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.1V at 250µA, a maximum gate-to-source voltage (Vgs) of ±20V, and a gate charge (Qg) of 7.8nC at 4.5V. The input capacitance (Ciss) is 770pF at 15V.
With a power dissipation of 780mW at 25°C ambient (Ta) and 21.5W at 25°C case (Tc), this MOSFET operates within a junction temperature range of -55°C to +150°C. It is packaged in an 8-WDFN (3.3x3.3) surface-mount configuration, suitable for various applications including CPU power delivery and DC-DC converters. The device is Pb-Free and Halogen Free, with RoHS3 compliance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTTFS4C13NTAG MOSFET is 30 V.
The continuous drain current (Id) at 25°C (Ta) for the NTTFS4C13NTAG is 7.2A.
The maximum Rds On at 30A, 10V for the NTTFS4C13NTAG is 9.4 mOhm.
The operating temperature range for the NTTFS4C13NTAG is -55°C to +150°C (TJ).
The NTTFS4C13NTAG is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTTFS4C13NTAG is 1 Unlimited.