NTTFS4C08NTAG The ON Semiconductor NTTFS4C08NTAG is an N-Channel MOSFET designed for power applications. It offers a 30V drain-source voltage and a continuous drain current of 9.3A.
Mfr Part #:

NTTFS4C08NTAG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTTFS4C08NTAG is an N-Channel MOSFET designed for power applications. It offers a 30V drain-source voltage and a continuous drain current of 9.3A.
✓ Total Stock: 81,506 pcs
$ Price Range: $0.99

NTTFS4C08NTAG Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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80,506 pcs
80506 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
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NTTFS4C08NTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS4C08NTAG Description

Short technical summary and product information.

The NTTFS4C08NTAG from ON Semiconductor is a single N-Channel Power MOSFET. It is designed to minimize conduction, driver, and switching losses, making it suitable for various power management applications.

 

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current (Id) of 9.3A at 25°C ambient temperature. The on-state resistance (Rds(on)) is as low as 5.9mOhm at 10V gate-source voltage, ensuring minimal conduction losses. The device features a maximum gate-to-source voltage (Vgs) of ±20V and a gate threshold voltage (Vgs(th)) of 2.2V at 250µA.

 

With a maximum power dissipation of 820mW at 25°C ambient temperature and 25.5W at 25°C case temperature, the NTTFS4C08NTAG is built for efficient operation. It operates within a junction temperature range of -55°C to 150°C. The MOSFET is housed in an 8-PowerWDFN package, designed for surface mounting.

 

This MOSFET is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for environmentally conscious designs. Applications include DC-DC converters, power load switches, and notebook battery management systems.

NTTFS4C08NTAG Quick Information

Product Type: MOSFET
Series: NTTFS4C08NTAG
Canonical Name: N-Channel MOSFET, 30V, 9.3A
Subcategory: N-Channel

NTTFS4C08NTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS4C08NTAG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS4C08NTAG Features

  • 30V maximum drain-source voltage.
  • 9.3A continuous drain current.
  • Low 5.9mOhm on-resistance.
  • Optimized gate charge for efficiency.
  • Pb-Free and RoHS Compliant.

NTTFS4C08NTAG Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for power management modules
  • Designed for compact electronic devices

NTTFS4C08NTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTTFS4C08NTAG?

The maximum drain-to-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 9.3A at 25°C ambient temperature.

What is the maximum on-resistance (Rds(on))?

The maximum on-resistance is 5.9mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package type is the NTTFS4C08NTAG available in?

It is available in an 8-PowerWDFN package for surface mounting.

Is the NTTFS4C08NTAG RoHS compliant?

Yes, the device is RoHS3 Compliant.

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