NTTFS4C06NTWG The ON Semiconductor NTTFS4C06NTWG is an N-Channel MOSFET designed for power applications. It offers a 30V drain-to-source voltage and a continuous drain current of up to 67A.
Mfr Part #:

NTTFS4C06NTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTTFS4C06NTWG is an N-Channel MOSFET designed for power applications. It offers a 30V drain-to-source voltage and a continuous drain current of up to 67A.
✓ Total Stock: 5,000 pcs
$ Price Range: $0.99

NTTFS4C06NTWG Available from 1 distributor

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✓ Non-Authorised
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NTTFS4C06NTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS4C06NTWG Description

Short technical summary and product information.

The ON Semiconductor NTTFS4C06NTWG is a single N-Channel MOSFET designed for power management applications. It features a low on-resistance of 4.2mOhm at 10V gate-source voltage, minimizing conduction losses. With a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of up to 67A under specific conditions, this MOSFET is suitable for demanding applications.

 

Key electrical characteristics include a gate charge (Qg) of 36nC at 10V and an input capacitance (Ciss) of 3366pF at 15V, optimizing driver and switching losses. The device operates within a temperature range of -55°C to 150°C (TJ).

 

Packaged in an 8-WDFN (3.3x3.3) surface-mount configuration, the NTTFS4C06NTWG is designed for efficient thermal performance, with a junction-to-case thermal resistance of 4.1°C/W. It is Pb-Free and Halogen Free, compliant with RoHS standards.

 

Applications include DC-DC converters, power load switches, and notebook battery management systems.

NTTFS4C06NTWG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTTFS4C06NTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS4C06NTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS4C06NTWG Features

  • 30V Drain-to-Source Voltage rating.
  • 67A Continuous Drain Current capability.
  • Low 4.2mOhm On-Resistance at 10V.
  • Optimized gate charge for switching.
  • Pb-Free and Halogen Free construction.

NTTFS4C06NTWG Applications

  • Suitable for DC-DC converters.
  • Used in power load switch circuits.
  • Ideal for notebook battery management.
  • Power management applications.

NTTFS4C06NTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTTFS4C06NTWG?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the NTTFS4C06NTWG?

The continuous drain current is 11A at 25°C ambient temperature and 67A at 25°C case temperature.

What is the typical on-resistance of the NTTFS4C06NTWG?

The on-resistance (Rds(on)) is a maximum of 4.2mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NTTFS4C06NTWG supplied in?

The device is supplied in an 8-WDFN (3.3x3.3) package suitable for surface mounting.

Is the NTTFS4C06NTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTTFS4C06NTWG?

The Moisture Sensitivity Level is 1.

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