| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTTFS4939NTAG is a single N-Channel MOSFET manufactured by On Semiconductor. It is designed for applications requiring efficient power switching, featuring a drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current of 52A when measured at the case temperature (Tc).
Key electrical characteristics include a low on-resistance (Rds(on)) of 5.5mOhm at 20A and 10V, and 8.0mOhm at 4.5V. The gate charge (Qg) is 28nC at 10V, and the input capacitance (Ciss) is 1979pF at 15V. The gate-to-source voltage (Vgs) maximum rating is ±20V, with a gate threshold voltage (Vgs(th)) of 2.2V at 250µA.
This MOSFET has a maximum power dissipation of 29.8W at 25°C (Tc) and 850mW at 25°C (Ta). It operates within a junction temperature range of -55°C to 150°C. The device is supplied in an 8-PowerWDFN surface mount package with dimensions of 3.3x3.3mm.
Applications for the NTTFS4939NTAG include low-side DC-DC converters, power load switches, notebook battery management, and motor control. It is Pb-Free and Halogen Free, complying with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 8.9A at 25°C ambient temperature and 52A at 25°C case temperature.
The Rds(on) is a maximum of 5.5mOhm at 20A and 10V, and 8.0mOhm at 4.5V.
The operating junction temperature range is -55°C to 150°C.
It is supplied in an 8-PowerWDFN package, specifically 8-WDFN (3.3x3.3).
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.