| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,153 pcs
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1153 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel | |
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The NTTFS3D7N06HLTWG from ON Semiconductor is a single N-Channel MOSFET designed for high-efficiency applications. It boasts a maximum drain-to-source voltage of 60V and a low on-resistance of 3.9 mOhm at a gate-source voltage of 10V and a drain current of 23A. The device can handle a continuous drain current of up to 103A at case temperature and 16A at ambient temperature.
This MOSFET utilizes high-performance technology for extremely low RDS(on), making it suitable for DC-DC buck converters, point of load applications, high efficiency load switches, and low side switching. It operates within a junction temperature range of -55°C to +150°C and is available in an 8-PQFN package with surface mount mounting type.
The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility in its application. Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2V at 120µA. The input capacitance is 2383 pF at 30V, and the gate charge is 32.7 nC at 10V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NTTFS3D7N06HLTWG is 60V.
The Rds(on) is a maximum of 3.9mOhm at a gate-source voltage of 10V and a drain current of 23A.
The continuous drain current is rated at 103A at the case temperature and 16A at ambient temperature.
The operating junction and storage temperature range is -55°C to +150°C.
The NTTFS3D7N06HLTWG is supplied in an 8-PQFN (3.3x3.3) package.
Yes, the NTTFS3D7N06HLTWG is RoHS3 Compliant.