| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24,465 pcs
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24465 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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This N-Channel MOSFET from On Semiconductor, part number NTTFS1D8N02P1E, is designed for power applications requiring efficient switching. It features a maximum drain-to-source voltage of 25V and a low on-resistance (Rds On) of 1.3mOhm at a gate-source voltage of 10V, and 1.8mOhm at 4.5V. The device can handle continuous drain currents up to 150A when the case temperature is 25°C, and 36A when the ambient temperature is 25°C with a specific PCB layout.
Key electrical characteristics include a gate charge (Qg) of 38nC at 10V and an input capacitance (Ciss) of 3159pF at 13V. The operating temperature range is from -55°C to +150°C. The MOSFET is housed in a compact 8-PQFN (3.3x3.3) surface-mount package, making it suitable for designs where space is a constraint.
Typical applications for this MOSFET include DC-DC converters, power load switches, and notebook battery management systems. Its low Rds(on) minimizes conduction losses, while low QG and capacitance minimize driver losses, contributing to overall system efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTTFS1D8N02P1E MOSFET is 25V.
The maximum Rds On is 1.3mOhm at a drain current of 30A and a gate-source voltage of 10V.
The operating junction and storage temperature range is -55°C to +150°C.
The NTTFS1D8N02P1E MOSFET is in an 8-PowerWDFN package, specifically an 8-PQFN (3.3x3.3) for surface mounting.
Yes, the NTTFS1D8N02P1E MOSFET is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.