NTTFS080N10GTAG The NTTFS080N10GTAG is a 100V N-Channel MOSFET from onsemi, designed for surface mount applications. It offers a low Rds On of 72mOhm at 4A and 10V.
Mfr Part #:

NTTFS080N10GTAG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTTFS080N10GTAG is a 100V N-Channel MOSFET from onsemi, designed for surface mount applications. It offers a low Rds On of 72mOhm at 4A and 10V.
✓ Total Stock: 8,390 pcs
$ Price Range: $0.99

NTTFS080N10GTAG Available from 1 distributor

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✓ Non-Authorised
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NTTFS080N10GTAG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTTFS080N10GTAG Description

Short technical summary and product information.

The NTTFS080N10GTAG is an N-Channel MOSFET manufactured by onsemi. It features a Drain to Source Voltage (Vdss) of 100V and a low on-resistance (Rds On) of 72mOhm at a drain current (Id) of 4A and gate-source voltage (Vgs) of 10V. The device has a maximum gate charge (Qg) of 8.6 nC at 10V Vgs and a gate threshold voltage (Vgs(th)) of 4V at 22µA.

 

This MOSFET is designed for surface mount applications, utilizing an 8-WDFN package with dimensions of 3.3x3.3mm. It operates within a temperature range of -55°C to 175°C (TJ). The continuous drain current is rated at 4.1A at ambient temperature (Ta) and 16A at case temperature (Tc). Power dissipation is 2.5W (Ta) and 39W (Tc).

 

Key electrical characteristics include a maximum gate-source voltage of ±20V and a drive voltage of 10V. The technology employed is MOSFET (Metal Oxide).

NTTFS080N10GTAG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTTFS080N10GTAG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTTFS080N10GTAG Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTTFS080N10GTAG Features

  • 100V Drain to Source Voltage (Vdss)
  • 72mOhm maximum Rds On at 4A, 10V
  • 8.6nC maximum Gate Charge (Qg)
  • Surface Mount 8-WDFN package
  • Wide operating temperature range

NTTFS080N10GTAG Applications

  • Power switching applications
  • Efficient power management
  • Automotive applications
  • Industrial control systems

NTTFS080N10GTAG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain to Source Voltage (Vdss) for the NTTFS080N10GTAG?

The maximum Drain to Source Voltage (Vdss) is 100V.

What is the maximum Rds On for the NTTFS080N10GTAG?

The maximum Rds On is 72mOhm at 4A drain current and 10V gate-source voltage.

What is the Gate Charge (Qg) of the NTTFS080N10GTAG?

The maximum Gate Charge (Qg) is 8.6 nC at 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 175°C (TJ).

What type of package is the NTTFS080N10GTAG in?

It is in an 8-WDFN package designed for surface mounting.

Is the NTTFS080N10GTAG RoHS compliant?

Yes, it is RoHS3 Compliant.

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