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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from On Semiconductor, part number NTTFS016N06CTAG, is designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 60V and can handle a continuous current of 8A under ambient conditions and 32A under case conditions. The MOSFET has a low on-resistance of 16.3mOhm at 5A and 10V gate-source voltage, contributing to efficient power handling. Its power dissipation is rated at 2.5W (Ta) and 36W (Tc).
The device is housed in an 8-WDFN (3.3x3.3) surface mount package, making it suitable for compact designs. The operating temperature range is -55°C to 175°C (TJ). Key electrical characteristics include a gate charge of 6.9 nC and an input capacitance of 489 pF, both measured under specific conditions.
This MOSFET utilizes Metal Oxide technology and is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. Its compact package and robust electrical specifications make it a versatile component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum continuous drain current at ambient temperature is 8A.
The maximum power dissipation at ambient temperature is 2.5W.
It comes in an 8-PowerWDFN package measuring 3.3x3.3mm.
It operates from -55°C to 175°C.
Yes, it is RoHS3 compliant.